Atomic hydrogen cleaning of InP(100): Electron yield and surface morphology of negative electron affinity activated surfaces
Identifieur interne : 00E581 ( Main/Repository ); précédent : 00E580; suivant : 00E582Atomic hydrogen cleaning of InP(100): Electron yield and surface morphology of negative electron affinity activated surfaces
Auteurs : RBID : Pascal:02-0066361Descripteurs français
- Pascal (Inist)
- Wicri :
- concept : Hydrogène.
English descriptors
- KwdEn :
Abstract
Atomic hydrogen cleaning of the InP(100) surface has been investigated using quantitative reflection high-energy electron diffraction. The quantum efficiency of the surface when activated to negative electron affinity was correlated with surface morphology. The electron diffraction patterns showed that hydrogen cleaning is effective in removing surface contaminants, leaving a clean, ordered, and (2×4)-reconstructed surface. After activation to negative electron affinity, a quantum efficiency of ∼6% was produced in response to photoactivation at 632 nm. Secondary electron emission from the hydrogen-cleaned InP(100)-(2×4) surface was measured and correlated to the quantum efficiency. The morphology of the vicinal InP(100) surface was investigated using electron diffraction. The average terrace width and adatom-vacancy density were measured from the (00) specular beam at the out-of-phase condition. With hydrogen cleaning time, there was some reduction in the average terrace width. The surface quality was improved with hydrogen cleaning, as indicated by the increased (00) spot intensity-to-background ratio at the out-of-phase condition, and improved quantum efficiency after activation to negative electron affinity. © 2002 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 00FE58
Links to Exploration step
Pascal:02-0066361Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Atomic hydrogen cleaning of InP(100): Electron yield and surface morphology of negative electron affinity activated surfaces</title><author><name sortKey="Hafez, M A" uniqKey="Hafez M">M. A. Hafez</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering and the Applied Research Center, Old Dominion University, Norfolk, Virginia 23529</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering and the Applied Research Center, Old Dominion University, Norfolk</wicri:cityArea></affiliation></author><author><name sortKey="Elsayed Ali, H E" uniqKey="Elsayed Ali H">H. E. Elsayed Ali</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering and the Applied Research Center, Old Dominion University, Norfolk, Virginia 23529</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Virginie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering and the Applied Research Center, Old Dominion University, Norfolk</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0066361</idno><date when="2002-02-01">2002-02-01</date><idno type="stanalyst">PASCAL 02-0066361 AIP</idno><idno type="RBID">Pascal:02-0066361</idno><idno type="wicri:Area/Main/Corpus">00FE58</idno><idno type="wicri:Area/Main/Repository">00E581</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron affinity</term><term>Experimental study</term><term>Hydrogen</term><term>III-V semiconductors</term><term>Indium compounds</term><term>RHEED</term><term>Secondary electron emission</term><term>Surface cleaning</term><term>Surface reconstruction</term><term>Surface structure</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8165C</term><term>6835B</term><term>7920H</term><term>8105E</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Hydrogène</term><term>Nettoyage surface</term><term>Structure surface</term><term>Reconstruction surface</term><term>Affinité électronique</term><term>RHEED</term><term>Emission électronique secondaire</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Hydrogène</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Atomic hydrogen cleaning of the InP(100) surface has been investigated using quantitative reflection high-energy electron diffraction. The quantum efficiency of the surface when activated to negative electron affinity was correlated with surface morphology. The electron diffraction patterns showed that hydrogen cleaning is effective in removing surface contaminants, leaving a clean, ordered, and (2×4)-reconstructed surface. After activation to negative electron affinity, a quantum efficiency of ∼6% was produced in response to photoactivation at 632 nm. Secondary electron emission from the hydrogen-cleaned InP(100)-(2×4) surface was measured and correlated to the quantum efficiency. The morphology of the vicinal InP(100) surface was investigated using electron diffraction. The average terrace width and adatom-vacancy density were measured from the (00) specular beam at the out-of-phase condition. With hydrogen cleaning time, there was some reduction in the average terrace width. The surface quality was improved with hydrogen cleaning, as indicated by the increased (00) spot intensity-to-background ratio at the out-of-phase condition, and improved quantum efficiency after activation to negative electron affinity. © 2002 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>91</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Atomic hydrogen cleaning of InP(100): Electron yield and surface morphology of negative electron affinity activated surfaces</s1></fA08><fA11 i1="01" i2="1"><s1>HAFEZ (M. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>ELSAYED ALI (H. E.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Computer Engineering and the Applied Research Center, Old Dominion University, Norfolk, Virginia 23529</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>1256-1264</s1></fA20><fA21><s1>2002-02-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0066361</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Atomic hydrogen cleaning of the InP(100) surface has been investigated using quantitative reflection high-energy electron diffraction. The quantum efficiency of the surface when activated to negative electron affinity was correlated with surface morphology. The electron diffraction patterns showed that hydrogen cleaning is effective in removing surface contaminants, leaving a clean, ordered, and (2×4)-reconstructed surface. After activation to negative electron affinity, a quantum efficiency of ∼6% was produced in response to photoactivation at 632 nm. Secondary electron emission from the hydrogen-cleaned InP(100)-(2×4) surface was measured and correlated to the quantum efficiency. The morphology of the vicinal InP(100) surface was investigated using electron diffraction. The average terrace width and adatom-vacancy density were measured from the (00) specular beam at the out-of-phase condition. With hydrogen cleaning time, there was some reduction in the average terrace width. The surface quality was improved with hydrogen cleaning, as indicated by the increased (00) spot intensity-to-background ratio at the out-of-phase condition, and improved quantum efficiency after activation to negative electron affinity. © 2002 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A65</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H35B</s0></fC02><fC02 i1="03" i2="3"><s0>001B70I20H</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A05H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8165C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6835B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7920H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>8105E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Hydrogène</s0><s2>NC</s2></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Hydrogen</s0><s2>NC</s2></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Nettoyage surface</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Surface cleaning</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Structure surface</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Surface structure</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Reconstruction surface</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Surface reconstruction</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Affinité électronique</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Electron affinity</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>RHEED</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>RHEED</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Emission électronique secondaire</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Secondary electron emission</s0></fC03><fN21><s1>028</s1></fN21><fN47 i1="01" i2="1"><s0>0204M000131</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00E581 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00E581 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:02-0066361
|texte= Atomic hydrogen cleaning of InP(100): Electron yield and surface morphology of negative electron affinity activated surfaces
}}
| This area was generated with Dilib version V0.5.77. |  |